MRF6S21050LR3 Overview
Freescale Semiconductor Technical Data MRF6S21050L Rev. 0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.
MRF6S21050LR3 Key Features
- a s s A B f o r P C N - P C S / c e
- a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450