MRF6S21060NBR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation.
with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in C.
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