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MRF6S9130HSR3 - RF Power Field Effect Transistors

Download the MRF6S9130HSR3 datasheet PDF. This datasheet also covers the MRF6S9130HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Ferrite Beads, Short 47 pF Chip Capacitors 8.2 pF Chip Capacitor 0.8- 8.0 pF Variable Capacitors, Gigatrim 12 pF Chip Capacitors 20 K pF Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 11 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 0.56 μF, 50 V Chip Capacito

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S9130HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
MRF6S9060MR1 RF Power Field Effect Transistors NXP
MRF6S9060NBR1 RF Power Field Effect Transistors NXP
MRF6S9060NR1 RF Power Field Effect Transistors NXP
MRF6S21140HR3 RF Power FET NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S9130HR3 RF Power Field Effect Transistors
MRF6S9125MBR1 RF Power Field Effect Transistors
MRF6S9125MR1 RF Power Field Effect Transistors
MRF6S9125NBR1 RF Power Field Effect Transistors
MRF6S9125NR1 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 48.
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