MRF6S9130HSR3 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operatio.
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
* Typical Single - Carrier N.
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