Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF6S9160H Rev. 1, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for N
- CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
- Typical Single
- Carrier N
- CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS
- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain
- 20.9 dB Drain Efficiency
- 30.5% ACPR @ 750 kHz Offset
- - 46.8 dBc in 30 kHz Bandwidth GSM...