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MRF7S21150HR3 - RF Power Field Effect Transistors

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Numbe.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF7S21150HSR3 RF Power Field Effect Transistors
MRF7S21170HR3 RF Power Field Effect Transistors
MRF7S21170HSR3 RF Power Field Effect Transistors
MRF7S15100HR3 RF Power Field Effect Transistors
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • CT13ylip5pi0pcianmlgAS, ,iCnPgholaeunt-n=Cea4l r4BriaWenradWtwts-idCAthDvgM=.,A3F.Pu8l4el rFMforHermqzu,aeInnncpceuy:tVBSDaigDnnd=a, l2IQP8AMVRoal=gtsn7,i.tI5uDdQdeB= @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.
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