MRF7S15100HSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF7S15100HSR3

MRF7S15100HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF7S15100HSR3, a member of the MRF7S15100HR3 RF Power Field Effect Transistors family.

Description

Short Ferrite Bead 15 pF Chip Capacitors 0.5 pF Chip Capacitor 10 pF Chip Capacitor 6.8 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2.2 μF, 50 V Chip Capacitors 7.15 nH Inductors 100 Ω, 1/4 W Chip Resistors 10 KΩ, 1/4 W Chip Resistor Part Number 2743019447 ATC100B150JT500XT ATC100B

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Optimized for Doherty.

Datasheet Details

Part number	MRF7S15100HSR3
Manufacturer	Freescale Semiconductor
File Size	438.52 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S15100HSR3 Datasheet
Additional preview pages of the MRF7S15100HSR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 32% Device Output Signal PAR — 6.2 dB @ 0.

Published: Jul 16, 2009 |