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MRF7S21170HSR3 - RF Power Field Effect Transistors

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Freescale Semiconductor

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MRF7S21170HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF7S21170HSR3

Datasheet Details

Part number	MRF7S21170HSR3
Manufacturer	Freescale Semiconductor
File Size	507.95 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S21170HSR3 Datasheet
Note	This datasheet PDF includes multiple part numbers: MRF7S21170HSR3, MRF7S21170HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF7S21170HSR3 datasheet.

Product details

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Optimized for Doherty.

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Published: Dec 7, 2006 |