MRF7S21150HR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF7S21150HR3

MRF7S21150HR3 - RF Power Field Effect Transistors

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Numbe.

Datasheet Details

Part number	MRF7S21150HR3
Manufacturer	Freescale Semiconductor
File Size	485.44 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S21150HR3 Datasheet
Additional preview pages of the MRF7S21150HR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • CT13ylip5pi0pcianmlgAS, ,iCnPgholaeunt-n=Cea4l r4BriaWenradWtwts-idCAthDvgM=.,A3F.Pu8l4el rFMforHermqzu,aeInnncpceuy:tVBSDaigDnnd=a, l2IQP8AMVRoal=gtsn7,i.tI5uDdQdeB= @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.

Published: Jan 13, 2008 |