MRF7S21150HR3 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. - CT13ylip5pi0pcianmlgAS, ,iCnPgholaeunt-n=Cea4l r4BriaWenradWtwts-idCAthDvgM=.,A3F.Pu8l4el rFMforHermqzu,aeInnncpceuy:tVBSDaigDnnd=a, l2IQP8AMVRoal=gtsn7,i.tI5uDdQdeB= @ 0.01% Probability on CCDF. Power Gain - 17.5 dB Drain Efficiency - 31% Device Output Signal PAR - 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset - - 37 dBc in 3.84 MHz...