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MRF7S21150HR3 - RF Power Field Effect Transistors

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Freescale Semiconductor

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MRF7S21150HR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRF7S21150HR3

Datasheet Details

Part number	MRF7S21150HR3
Manufacturer	Freescale Semiconductor
File Size	485.44 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S21150HR3 Datasheet
Additional preview pages of the MRF7S21150HR3 datasheet.

Product details

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Numbe.

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Published: Jan 13, 2008 |