MRF7S21150HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF7S21150HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF7S21150HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	485.44 KB
Description	RF Power Field Effect Transistors
Download	MRF7S21150HR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

Key Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Numbe.

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