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MRF7S21170HSR3 - RF Power Field Effect Transistors

Download the MRF7S21170HSR3 datasheet PDF. This datasheet also covers the MRF7S21170HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF7S21170HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF7S18170HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF7S19100NBR1 RF Power Field Effect Transistors Motorola Semiconductor
MRF7S19100NR1 RF Power Field Effect Transistors Motorola Semiconductor

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF7S21170HR3 RF Power Field Effect Transistors
MRF7S21150HR3 RF Power Field Effect Transistors
MRF7S21150HSR3 RF Power Field Effect Transistors
MRF7S15100HR3 RF Power Field Effect Transistors
MRF7S15100HSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.  Typical Single--Carrier W--CDMA 1C4h0a0nnmeAl ,BPanoudtw=id5t0h Watts Avg., f = 3.84 MHz, =Pe2r1fo6r7m.5anMcHe:z,VIDQDM=a2g8nVituodltes,CIDliQpp=ing, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --37 dBc in 3.
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