Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF9002NR2 Rev. 8, 5/2006
RF Power Field Effect Transistor Array
- Channel Enhancement
- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large
- signal, mon
- source amplifier applications in 26 volt base station equipment. The device is in a PFP
- 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
- Typical Performance at 960 MHz, 26 Volts Output Power
- 2 Watts Per Transistor Power Gain
- 18 dB Efficiency
- 50%
-...