Datasheet4U Logo Datasheet4U.com

MRF9002NR2 - RF Power FET

Description

33 pF Chip Capacitors (0805) 1.0 μF, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0

Features

  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MRF9002NR2 1000 MHz, 2 W, 26 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9002R2 RF Power Field Effect Transistor Array Motorola Inc
MRF901 NPN SILICON RF TRANSISTOR ASI
MRF901 NPN Silicon High-Frequency Transistor Motorola
MRF9011 NPN Silicon High-Frequency Transistor Motorola
MRF9011L NPN Silicon High-Frequency Transistor Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9030LR1 RF Power Field Effect Transistor
MRF9030MBR1 RF Power Field Effect Transistors
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030MR1 RF Power Field Effect Transistors
MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
Published: |