• Part: MRF9030MBR1
  • Description: RF POWER FIELD EFFECT TRANSISTORS
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 620.78 KB
Download MRF9030MBR1 Datasheet PDF
Freescale Semiconductor
MRF9030MBR1
MRF9030MBR1 is RF POWER FIELD EFFECT TRANSISTORS manufactured by Freescale Semiconductor.
- Part of the MRF9030MBR1-1 comparator family.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment. - Typical Performance at 945 MHz, 26 Volts Output Power - 30 Watts PEP Power Gain - 20 dB Efficiency - 41% (Two Tones) IMD - -31 dBc - Integrated ESD Protection - Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)...