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2SK3581-01SJ - N-CHANNEL SILICON POWER MOSFET

This page provides the datasheet information for the 2SK3581-01SJ, a member of the 2SK3581-01L N-CHANNEL SILICON POWER MOSFET family.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4.

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Datasheet preview – 2SK3581-01SJ

Datasheet Details

Part number 2SK3581-01SJ
Manufacturer Fuji Electric
File Size 276.71 KB
Description N-CHANNEL SILICON POWER MOSFET
Datasheet download datasheet 2SK3581-01SJ Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR *2 16 mJ EAS *1 212.2 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.
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