2SK3596-01L - (2SK3596-01x) N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Download the 2SK3596-01L datasheet PDF. This datasheet also covers the 2SK3596-01S variant, as both devices belong to the same (2sk3596-01x) n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

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2SK3596-01L (2sk3596-01x) n-channel silicon power mosfet by Fuji Electric - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SK3596-01S_FujiElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SK3596-01L
Manufacturer	Fuji Electric
File Size	149.13 KB
Description	(2SK3596-01x) N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3596-01L Datasheet

Full PDF Text Transcription for 2SK3596-01L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3596-01L. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resist...

View more extracted text

gs (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.

More Datasheets from Fuji Electric

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