MB85R256

The MB85R256 is Memory FRAM designed by Fuji Electric.

Product Overview

Fuji Electric

Datasheet Details

Part number	MB85R256
Manufacturer	Fuji Electric
File Size	176.66 KB
Description	Memory FRAM
Datasheet	MB85R256_FujiElectric.pdf
Additional preview pages of the MB85R256 datasheet.

Product details

Description

The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Features

Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range:.
40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package s.

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Other Datasheets by Fuji Electric

Published: Sep 28, 2007 |