MB81EDS516545 Fujitsu Semiconductor Limited Datasheet

MB81EDS516545 Key Features

• 2 M word × 64 bit × 4 banks organization
• DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj
• Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V
• Junction Temperature: TJ =
• 10 °C to + 125 °C
• 1.8 V-CMOS patible inputs
• Unidirectional READ Data Strobe per 2 byte
• Unidirectional WRITE Data Strobe per 2 byte
• Burst Length: 2, 4, 8, 16
• CAS latency: 2, 3, 4