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MB81EDS256445 - 256M-Bit FCRAM

Description

The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM

) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format.

Features

  • S.
  • 1 M word × 64 bit × 4 banks organization.
  • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C).
  • Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V.
  • Junction Temperature: TJ =.
  • 10 °C to + 125 °C.
  • 1.8 V-CMOS compatible inputs.
  • Burst Length: 2, 4, 8, 16.
  • CAS latency: 2, 3, 4.
  • Clock Stop capability during idle periods.
  • Auto.

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Full PDF Text Transcription

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FUJITSU MICROELECTRONICS DATA SHEET DS05-11456-1E MEMORY Consumer FCRAMTM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP MB81EDS256445 ■ DESCRIPTION The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format. MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan ■ FEATURES • 1 M word × 64 bit × 4 banks organization • DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) • Low Voltage Power Supply: VDD = VDDQ + 1.
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