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MB81EDS256445 Datasheet PDF

Fujitsu MB81EDS256445

MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format. MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption.
Part No. MB81EDS256445
Datasheet MB81EDS256445 Download
Manufacturer
Fujitsu
Description 256M-Bit FCRAM
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MB81EDS256445 datasheet page 1 preview

APPLICATIONS

Specific Memory for SiP MB81EDS256445
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DESCRIPTION

The Fujitsu * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
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FEATURES

● 1 M word × 64 bit × 4 banks organization
● DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
● Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V
● Junction Temperature: TJ = − 10 °C to + 125 °C
● 1.8 V-CMOS compatible inputs
● Burst Length: 2, 4, 8, 16
● CAS latency: 2, 3, 4
● Clock Stop capability during idle periods
● Auto Precharge option for each burst access
● Configurable Driver Strength and Pre Driver Strength
● Auto Refresh and Self Refresh Modes
● Deep Power Down Mode
● Low Power Consumption -IDD4R =300 mA Max @ 3.46 GByte/s -IDD4W =330 mA Max @ 3.46 GByte/s
● 4 K refresh cycles / 4 ms (Tj ≤ +125 °C) Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 MB81EDS256445
● PIN DESCRIPTIONS Symbol CK, CK CKE CS RAS CA...
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