MB81EDS256445 Datasheet | Fujitsu Semiconductor Limited

FUJITSU MICROELECTRONICS DATA SHEET DS05-11456-1E MEMORY Consumer FCRAMTM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for Si P - DESCRIPTION The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM- ) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format. MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption. - : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan - Features - 1 M word × 64 bit × 4 banks organization - DDR Burst Read/Write Access Capability -t CK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -t CK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) - Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V - Junction Temperature: TJ = - 10 °C to + 125 °C - 1.8 V-CMOS patible inputs - Burst Length: 2, 4, 8, 16 - CAS latency: 2, 3, 4 - Clock Stop capability during idle periods - Auto Precharge option for each burst access - Configurable Driver Strength and Pre Driver Strength - Auto Refresh and Self Refresh Modes - Deep Power Down Mode - Low Power Consumption -IDD4R =300 m A Max @ 3.46 GByte/s -IDD4W =330 m A Max @ 3.46 GByte/s - 4 K refresh cycles / 4 ms (Tj ≤ +125 °C) Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 ..net - PIN DESCRIPTIONS Symbol CK, CK CKE CS RAS CAS WE BA[1:0] A[11:0] AP(A10) DM[7:0] - 1...