MB85R256F Datasheet | Fujitsu Semiconductor Limited

FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00011-1v0-E 256 K (32 K × 8) Bit - DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R256F uses a pseudo - SRAM interface patible with...