Datasheet4U Logo Datasheet4U.com

MB85RC04V - 4K-bit I2C Memory FRAM

Description

The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Features

  • Bit configuration : 512 words × 8 bits.
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max).
  • Read/write endurance : 1012 times / byte.

📥 Download Datasheet

📁 Similar Datasheet

  • MB85R1001 - 1 M Bit (128 K X 8) (Fujitsu Media Devices)
  • MB85R1002 - Memory FRAM (Fujitsu Media Devices)
  • MB85R256 - Memory FRAM (Fuji Electric)
  • MB85R256H - Memory FRAM CMOS 256 K (32 K X 8) Bit (Fujitsu Media Devices)
  • MB805 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB81 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB810 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB814400A-70PFTN - CMOS 4M-Bit DRAM (ETC)
  • MB81C4251 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)
  • MB81C4253 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)
Other Datasheets by Fujitsu

Full PDF Text Transcription

Click to expand full text
FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 4 K (512 × 8) Bit I2C MB85RC04V DS501-00016-2v0-E ■ DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC04V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.
Published: |