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MB85RC256V - 256K (32K x 8)Bit I2C

General Description

The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Key Features

  • Bit configuration.
  • Two-wire serial interface.
  • Operating frequency.
  • : 32,768 words × 8 bits : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). : 2.7V to 4.5V 400 kHz (Max) 4.5V to 5.5V 1 MHz (Max) Read/write endurance : 1010 times / byte Data retention : 10 years ( + 70 °C) Operating power supply voltage : 2.7 V to 5.5 V Low-power consumption : Operating power supply current TBD μA (Ty.

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Full PDF Text Transcription (Reference)

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FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K (32 K × 8) Bit I2C MB85RC256V ■ DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1010 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.