Description
The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Features
- Bit configuration.
- Two-wire serial interface.
- Operating frequency.
- : 32,768 words × 8 bits : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). : 2.7V to 4.5V 400 kHz (Max) 4.5V to 5.5V 1 MHz (Max) Read/write endurance : 1010 times / byte Data retention : 10 years ( + 70 °C) Operating power supply voltage : 2.7 V to 5.5 V Low-power consumption : Operating power supply current TBD μA (Ty.
MB85RC256V Datasheet
