Datasheet4U Logo Datasheet4U.com

MB85RC16V - 16K (2K x 8) Bit I2C

Description

The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Features

  • Bit configuration : 2,048 words × 8 bits.
  • Two-wire serial interface : Fully controllable by t.

📥 Download Datasheet

📁 Similar Datasheet

  • MB85R1001 - 1 M Bit (128 K X 8) (Fujitsu Media Devices)
  • MB85R1002 - Memory FRAM (Fujitsu Media Devices)
  • MB85R256 - Memory FRAM (Fuji Electric)
  • MB85R256H - Memory FRAM CMOS 256 K (32 K X 8) Bit (Fujitsu Media Devices)
  • MB805 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB81 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB810 - Single Phase Bridge Rectifier (Micro Commercial Components)
  • MB814400A-70PFTN - CMOS 4M-Bit DRAM (ETC)
  • MB81C4251 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)
  • MB81C4253 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)
Other Datasheets by Fujitsu

Full PDF Text Transcription

Click to expand full text
FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00010-6v0-E 16 K (2 K × 8) Bit I2C MB85RC16V ■ DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 1012 Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM.
Published: |