MB84VD23381FJ Key Features
- Power Supply Voltage of 2.7 V to 3.1 V
- High Performance 70 ns maximum access time (Flash) 80 ns maximum access time (FCRAM)
- Operating Temperature -30 °C to +85 °C
- Package 65-ball FBGA
- Both VCCf and VCCr must be the same level when either part is being accessed
- 0.17 µm Process Technology
- Simultaneous Read/Write Operations (Dual Bank)
- Single 3.0 V Read, Program, and Erase Minimized system level power requirements
- Minimum 100,000 Program/Erase Cycles
- Sector Erase Architecture Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word. Any bination of sectors c
