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MB84VP23481FK-70 - 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

General Description

Pin name A20 to A0 A21 DQ15 to DQ0 CEf CE1r CE2r OE WE RY/BY UB LB RESET WP/ACC N.C.

Power Power Power Address Inputs (Common) Address Input (Flash) Data Inputs/Outputs (Common) Chip Enable (Flash) Chip Enable (FCRAM) Chip Enable (FCR

Key Features

  • Power Supply Voltage of 2.7 V to 3.1 V.
  • High Performance 25 ns maximum page read access time, 65 ns maximum random access time (Flash) 20 ns maximum page read access time, 70 ns maximum random access time (FCRAM).
  • Operating Temperature.
  • 30 °C to +85 °C.
  • Package 65-ball FBGA (Continued) s.

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Full PDF Text Transcription for MB84VP23481FK-70 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MB84VP23481FK-70. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50224-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64M (×16) Page FLASH MEMORY & 32M (×16) Mobi...

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FLASH MEMORY & FCRAM CMOS 64M (×16) Page FLASH MEMORY & 32M (×16) Mobile FCRAMTM MB84VP23481FK-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 25 ns maximum page read access time, 65 ns maximum random access time (Flash) 20 ns maximum page read access time, 70 ns maximum random access time (FCRAM) • Operating Temperature –30 °C to +85 °C • Package 65-ball FBGA (Continued) s PRODUCT LINEUP Flash Supply Voltage (V) Max Random Address Access Time (ns) Max Page Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 3.0 V 65 25 65 25 +0.1V –0.3 V FCRAM VCCr* = 3.0 V –0.3 V 70

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