MB85R256H Datasheet Memory FRAM CMOS 256 K (32 K X 8) Bit

Manufacturer: Fujitsu Semiconductor Limited

MB85R256H memory fram cmos 256 k (32 k x 8) bit by Fujitsu Semiconductor Limited - Datasheet Preview

Datasheet Details

Part number	MB85R256H
Manufacturer	Fujitsu Semiconductor Limited
File Size	304.13 KB
Description	Memory FRAM CMOS 256 K (32 K X 8) Bit
Download	MB85R256H Download (PDF)

General Description

S The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, MB85R256H is able to retain data without back-up battery.

The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability.

Overview

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K (32 K × 8) Bit.

Key Features

Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range:.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	MB85R256	Memory FRAM	Fuji Electric
	MB85R256F	Memory FRAM	Fujitsu

More Datasheets from Fujitsu Semiconductor Limited

Part Number	Description
MB85R1001	1 M Bit (128 K X 8)
MB85R1002	Memory FRAM
MB81C4251	1M-Bit Dual Port CMOS DRAM
MB81C4253	1M-Bit Dual Port CMOS DRAM
MB81C4256A	256K x 4-Bit Fast Page Mode Low Power DRAM
MB81C81A	CMOS 256K-BIT HIGH-SPEED SRAM
MB81C84A	CMOS 256K-BIT HIGH-SPEED SRAM
MB81C86	CMOS 256K-BIT HIGH-SPEED SRAM
MB81F643242C	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM
MB82D01171A	16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory