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MBM29PL32TM - (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash

General Description

The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits.

The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA.

The device is designed to be programmed in-system with the standard 3.0 V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Poll.

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Full PDF Text Transcription for MBM29PL32TM (Reference)

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20907-3E FLASH MEMORY CMOS 32 M (4M × 8/2M × 16) BIT MirrorFlashTM* MBM29PL32TM/BM 90/10 s DESCRIPTION The MBM29...

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× 16) BIT MirrorFlashTM* MBM29PL32TM/BM 90/10 s DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max Page Read Access Time MBM29PL32TM/BM 90 3.0 V to 3.6 V 90 ns 90 ns 25 ns

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