MBM29PL3200BE Datasheet PDF - Fujitsu Media Devices 32 M (2 M X 16/1 M X 32) BIT Specs

MBM29PL3200BE - 32 M (2 M X 16/1 M X 32) BIT

This page provides the datasheet information for the MBM29PL3200BE, a member of the MBM29PL3200TE 32 M (2 M X 16/1 M X 32) BIT family.

Datasheet Summary

Description

The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each.

The device is offered in 90-pin SSOP and 84-ball FBGA packages.

This device is designed to be programmed in-system with the standard system 3.0 V VCC supply.

Features

a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

Datasheet Details

Part number	MBM29PL3200BE
Manufacturer	Fujitsu Media Devices
File Size	670.76 KB
Description	32 M (2 M X 16/1 M X 32) BIT
Datasheet	MBM29PL3200BE Datasheet
Additional preview pages of the MBM29PL3200BE datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT MBM29PL3200TE/BE 70/90 s DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE-UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 V −0.3 V +0.6 V −0.3 V MBM29PL3200TE/BE 70  70 25 70 25  90 90 35 90 35 Max. Random Address Access Time (ns) Max.

Published: Oct 2, 2005 |