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MBM29PL3200BE - 32 M (2 M X 16/1 M X 32) BIT

Download the MBM29PL3200BE datasheet PDF. This datasheet also covers the MBM29PL3200TE variant, as both devices belong to the same 32 m (2 m x 16/1 m x 32) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each.

The device is offered in 90-pin SSOP and 84-ball FBGA packages.

This device is designed to be programmed in-system with the standard system 3.0 V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29PL3200TE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29PL3200TE 32 M (2 M X 16/1 M X 32) BIT
MBM29PL32BM (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
MBM29PL32TM (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
MBM29PL12LM FLASH MEMORY 128 M (16M x 8/8M x 16) BIT
MBM29PL160BD 16M (2M x 8/1M x 16) BIT FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT MBM29PL3200TE/BE 70/90 s DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE-UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 V −0.3 V +0.6 V −0.3 V MBM29PL3200TE/BE 70  70 25 70 25  90 90 35 90 35 Max. Random Address Access Time (ns) Max.