D84BM2 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

Download the D84BM2 datasheet PDF. This datasheet also includes the D84BN2 variant, as both parts are published together in a single manufacturer document.

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D84BM2 field effect power transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (D84BN2-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	D84BM2
Manufacturer	GE
File Size	193.06 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	D84BM2 Datasheet

Overview

~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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