* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84BN2
GE
193.06 KB
Field effect power transistor.
~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power .
📁 Related Datasheet
D84BK2 FIELD EFFECT POWER TRANSISTOR (GE)
D84BL2 FIELD EFFECT POWER TRANSISTOR (GE)
D84BM2 FIELD EFFECT POWER TRANSISTOR (GE)
D84BQ1 FIELD EFFECT POWER TRANSISTOR (GE)
D84BQ2 FIELD EFFECT POWER TRANSISTOR (GE)
D8407N Rectifier Diode (Infineon)
D844 2SD844 (SavantIC)
D845 2SD845 (Savant IC)
D845 NPN Silicon Power Transistors (MCC)
D845GEBV2 Quick Reference (Intel)
