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D84BQ1 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

Download the D84BQ1 datasheet PDF. This datasheet also includes the D84BQ2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (D84BQ2-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number D84BQ1
Manufacturer GE
File Size 196.59 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet D84BQ1 Datasheet

Overview

~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.5 AMPERES 400, 350 VOLTS RDS(ON) =3.6 .0.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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