* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84BQ1
GE
196.59 KB
Field effect power transistor.
~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.5 AMPERES 400, 350 VOLTS RDS(ON) =3.6 .0. This series of N-Channel Enhancement-mode P.
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