* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86FK2
GE
197.28 KB
Field effect power transistor.
~D~~ FIELD EFFECT POWER TRANSISTOR IRF150,151 D86FL2,K2 40 AMPERES 100,60 VOLTS ROS(ON) = 0.055 il This series of N:-Channel Enhancement-mode Power .
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