900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GE

D86FL2 Datasheet Preview

D86FL2 Datasheet

FIELD EFFECT POWER TRANSISTOR

No Preview Available !

~D~~
FIELD EFFECT POWER TRANSISTOR
IRF150,151
D86FL2,K2
40 AMPERES
100,60 VOLTS
ROS(ON) = 0.055 il
This series of N:-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device rugged-
ness and reliability.
.
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0845(21.47)
",;~r:."~~ ,~,~~-MAX.H·35819.09J MAX
0.063(1.60) DIA......J L
0.057(1.45)
II
.426(10.82) MIN.
CASE TEMP.
REFERENCE
POINT
.20(5.00)
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440(11.18)
0.420110.67)
=maximum ratings (TC 250 C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ TC = 25° C
@TC= 100°C
Pulsed Drain 9urrent(1)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
TJ, TSTG
IRF150/086FL2
100
100
40
25
160
±20
150
1.2
-55 to 150
IRF151/086FK2
60
60
40
25
160
±20
150
1.2
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Case
R8JC
Thermal Resistance, Junction to Ambient
R8JA
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
0.83
30
260
0.83
30
260
UNITS
Volts
Volts
A
A
A
Volts
Watts
WloC
°C
°CIW
°CIW
°C
133




GE

D86FL2 Datasheet Preview

D86FL2 Datasheet

FIELD EFFECT POWER TRANSISTOR

No Preview Available !

=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
= =(VGS OV, 10 250 JlA)
IRF150/D86FL2 BVDSS
IRF151/D86FK2
100
60
-
-
Zero Gate Voltage Drain Current
(Vos =Max Rating, VGS =OV, Tc =25°C)
= = =(VOS Max Rating, x 0.8, VGS OV, TC 125°C)
loss
-
-
-
-
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
-
MAX
UNIT
-
-
250
1000
±100
Volts
f.lA
nA
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p,A)
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =20A)
Forward Transconductance
(VOS =10V, 10 =20A)
=Tc 25°C VGS(TH)
10(ON)
ROS(ON)
9fs
2.0
40
-
8.1
-
-
0.050
10
4.0
-
0.055
-
Volts
A
Ohms
mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =OV
VOS =25V
f =1 MHz
Ciss
Coss
Crss
-
-
-
2800
1000
225
3000
1500
500
pF
pF
pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VOS =30V
10 =20A, VGS =15V
RGEN =50.0, RGS =12.5.0
Fall Time
=(RGS (EQUIV.) 10.0)
td(on)
tr
td(off)
tf
-
-
-
-
25 -
145 -
95 -
75 -
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Is -
ISM -
- 40 A
- 160 A
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =40A)
Reverse Recovery Time
= = =(Is 40A, dls/dt 100AlJlsec, TC 125°C)
VSO -
trr -
ORR -
1.3 2.5 Volts
300 -
2.8 -
ns
JlC
'Pulse Test: Pulse width :5 300 /lS, duty cycle :5 2%
1000
BOO
600
400
200
~
III 100
..... ;x~ ......r-.... ....... ......
....... lOp.
l :g , ,~ 40
Jt.
""w
"-~ ~"-fSII:
20
",,/'
....... lOOp•
.... 1m.
tJ
\ ~'" "- "-~
II:
10
8
t
-
OPERATION IN THIS AREA
Q 6 I- MAY BE LIMITED BY ROSION)
_" 4
~
........ I......
......
......
10ms
lOOms
IRFI51/D86FK2
PUL~EI- SINdLE
r-... ~ IRF150/D86FL2
2 Tc=250C
DC
jI
1
4 6 8 10
20
40 60 80100 200 400 600 1000
VOS' DRAIN-SOURCE VOLTAGE (VOLTS)
I2.4
IIII1
2.2 t - -
CONDITIONS:
=RD(ON) CONDITIONS: 10 20 A, VGS = 10V
2.0 r---- =VGS(i'H) CONDITIONS: 10 = 250pA, VDS VGS
Q
~ 1.8
:::;
~ 1.6
II:
~ 1.4
~
!:: 1.2
on
-"~ 1.0
-z
":. 0.8
.--- -----aoz
0.6
r---
,.. VROSIO~
".........
.--
--- -:---r--
~;-
II:
0.4
0.2
o
-40
o 40 80
TJ • JUNCTION TEMPERATURE (OC)
120
160
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
134


Part Number D86FL2
Description FIELD EFFECT POWER TRANSISTOR
Maker GE
PDF Download

D86FL2 Datasheet PDF






Similar Datasheet

1 D86FL2 FIELD EFFECT POWER TRANSISTOR
GE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy