* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D88FR2
GE
187.14 KB
Field effect power transistor.
~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFP451 ~450 D88FR1,R2 13 AMPERES 450, 500 VOLTS ROS(ON) =0.4 n This series of N-Channel Enhancement-mode Powe.
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