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IRF712 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

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Datasheet Details

Part number IRF712
Manufacturer GE
File Size 194.79 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRF712 Datasheet

Overview

~[gjD~[¥i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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