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IRFF131 - FIELD EFFECT POWER TRANSISTOR

This page provides the datasheet information for the IRFF131, a member of the IRFF130 FIELD EFFECT POWER TRANSISTOR family.

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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Datasheet preview – IRFF131

Datasheet Details

Part number IRFF131
Manufacturer GE
File Size 193.83 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRFF131 Datasheet
Additional preview pages of the IRFF131 datasheet.

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Other Datasheets by GE
  • IRFF130 - FIELD EFFECT POWER TRANSISTOR
  • IRFF132 - FIELD EFFECT POWER TRANSISTOR
  • IRFF133 - FIELD EFFECT POWER TRANSISTOR
  • IRFF210 - FIELD EFFECT POWER TRANSISTOR
  • IRFF211 - FIELD EFFECT POWER TRANSISTOR
  • IRFF212 - FIELD EFFECT POWER TRANSISTOR
  • IRFF213 - FIELD EFFECT POWER TRANSISTOR
  • IRFF220 - FIELD EFFECT POWER TRANSISTOR

Full PDF Text Transcription

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~D~[P~ IRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS ROS(ON) = 0.18!l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
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