IRFF231, IRFF230 Datasheet - GE

IRFF231 FIELD EFFECT POWER TRANSISTOR

~~D~[P~U IRFF230,231 FIELD EFFECT POWER TRANSISTOR 5.5 AMPERES 200,150 VOLTS ROS(ON) =0.4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF231 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF230-GE.pdf

IRFF231 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF231, IRFF230. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF231, IRFF230

Manufacturer:

File Size:

186.54 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF231, IRFF230.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFF230 N-Channel Power MOSFET (Intersil Corporation)

IRFF230 HEXFET TRANSISTORS (International Rectifier)

IRFF230 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF232 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF233 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF210 N-Channel Power MOSFET (Intersil Corporation)

IRFF210 TRANSISTORS (International Rectifier)

IRFF210 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFF231 IRFF230 FIELD EFFECT POWER TRANSISTOR GE

IRFF231 Distributor