IRFF431, IRFF430 Datasheet - GE

IRFF431 FIELD EFFECT POWER TRANSISTOR

~D~[F~ IRFF430,431 FIELD EFFECT POVVER TRANSISTOR 2.75 AMPERES 500, 450 VOLTS ROS(ON) =1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

IRFF431 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF430-GE.pdf

IRFF431 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF431, IRFF430. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF431, IRFF430

Manufacturer:

File Size:

186.22 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF431, IRFF430.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRFF430 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Seme LAB)

IRFF430 N-Channel Power MOSFET (Intersil Corporation)

IRFF430 HEXFET TRANSISTORS (International Rectifier)

IRFF430 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF432 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF433 FIELD EFFECT POWER TRANSISTOR (GE)

IRFF420 N-Channel Power MOSFET (Seme LAB)

IRFF420 N-Channel Power MOSFET (Intersil Corporation)

TAGS

IRFF431 IRFF430 FIELD EFFECT POWER TRANSISTOR GE

IRFF431 Distributor