2302 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GFD

Datasheet Details

Part number	2302
Manufacturer	GFD
File Size	621.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	2302 Datasheet

The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

GENERAL

2302 N-Channel Enhancement Mode Power MOSFET.

VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D 2302 G1 2S Marking and pin Assignment.

Brand Logo	Part Number	Description	Manufacturer
ETC	2302	Class C Microwave	ETC
ETC	2302	N-Channel MOSFET	ETC
	2302-RC	High Current Toroid Inductors	Bourns

Part Number	Description
2301	P-Channel Enhancement Mode Power MOSFET