2302 Datasheet | Specifications & PDF Download

ABOV SEMICONDUCTOR 11 SEGMENT X 7 GRID LED DRIVER WITH KEYSCAN MC2302 Data Sheet (Ver. 1.20) Version 1.20 Published by FAE Team 2008 ABOV Semiconduc

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Alfa-MOS Technology General Description AFN2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo

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Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability

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SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwi

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Temperature and humidity module AM2302 Product Manual www.aosong.com 1、Product Overview AM2302 capacitive humidity sensing digital temperature and hu

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : 2010.06.18 Page

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PE2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302N3 Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page

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  www.DataSheet4U.com                                                                                        ACE2302                              

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PE2302A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Your specialist in innovating humidity & temperature sensors Standard AM2302/DHT22 AM2302/DHT22 with big case and wires Digital relative humidity &

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 MT2302  N-Channel Enhancement Effect Transistor  Mo de Field Product Summary  PRODUCT SUMMARY VDSS ID RDS(ON)

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SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced tre

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NTE2302 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Features: D High Breakdown Voltage and High Reliability D High Swi

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.3 * 1 &KDQQHO 9' 6026)(7 GENERAL DESCRIPTION The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produce

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(O

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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20V N-Channel Enhancement Mode MOSFET Product Description GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide ex

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Miniature Relays P1 Product Information Miniature Relay P1 V23026 PCB relays – Pin or SMD – for DC operation, polarised, monostable or bistable Fe

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Data Sheet 2 A/3 A, 20 V, 700 kHz, Nonsynchronous Step-Down Regulators ADP2302/ADP2303 FEATURES Wide input voltage range: 3.0 V to 20 V Maximum load

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