2302 Datasheet | Specifications & PDF Download

    Features TP2301/TP2302  /TP2304 20MHz  Bandwidth,  Low  Noise  High  Precision  Op‐amps Description  Gain-bandwidth Product: 20MHz  Offset Vol

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Your specialist in innovating humidity & temperature sensors Standard AM2302/DHT22 AM2302/DHT22 with big case and wires Digital relative humidity &

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SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwi

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N-Channel Trench Power MOSFET General Description The CS2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operati

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ABOV SEMICONDUCTOR 11 SEGMENT X 7 GRID LED DRIVER WITH KEYSCAN MC2302 Data Sheet (Ver. 1.20) Version 1.20 Published by FAE Team 2008 ABOV Semiconduc

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Temperature and humidity module AM2302 Product Manual www.aosong.com 1、Product Overview AM2302 capacitive humidity sensing digital temperature and hu

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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N-Channel Power MOSFET General Features ● VDS = 20V,ID = 2.8 A RDS(ON) < 85mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing ca

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TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fas

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                                        LCD/LED Monitor Control Board   LCD control panel specifications       Model： ND-JY2302 Document Number：R

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w w w .D at aS he et 4U .c om www.DataSheet4U.com

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TD62301,302P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62301P,TD62301F,TD62302P,TD62302F 7CH LOW SATURATION SINK DRIVER The TD

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HM2302 、 HM2302 。 ，。 ，。、 、、。 HM2302 、 I2C 。， 。、， 20 ， 。I2C ， I2C ， ，。、 CRC ，，，。 ，，，。 4 ，， 。 、 、、、、 、、、、、 、 、。 、 、、、、、、 、、、 I2C 、。 、（：mm） （：mm）

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DP2302 N-Channel 0-V(D-S)MOSFET V(BR)DSS Rds(on)MAX Id 20V 30mΩ@4.5V 40mΩ@2.5V 2.1A DP2302 FEATURE ● TrenchFET Power MOSFET MARKING APPLICATIO

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V

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Analog Power AM2302NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rD

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TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS

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Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability

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NB3N2302 3.3V / 5V 5MHz to 133MHz Frequency Multiplier and Zero Delay Buffer Description The NB3N2302 is a versatile Zero Delay Buffer that operates

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N-Channel Enhancement Mode Power MOSFET Description The MX2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper

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