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SPN2302A - N-Channel MOSFET

General Description

The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V.
  • 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V.
  • 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design.

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Datasheet Details

Part number SPN2302A
Manufacturer SYNC POWER
File Size 350.14 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2302A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES  20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=135mΩ@VGS=1.