SPN2302A Description
The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching ,...
SPN2302A Key Features
- 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V
- 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V
- 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
SPN2302A Applications
- Power Management in Note book