SPN2302 Description
The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN2302 Key Features
- 20V/3.6A,RDS(ON)=80mΩ@VGS=4.5V
- 20V/3.1A,RDS(ON)=95mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
SPN2302 Applications
- Power Management in Note book