SPN2302D Description
The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN2302D Key Features
- 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V
- 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V
- 20V/2.8A,RDS(ON)=140mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23 package design
SPN2302D Applications
- Power Management in Note book