SPN2308 Overview
The SPN2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and...
SPN2308 Key Features
- 20V/2.0A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/1.5A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/1.0A,RDS(ON)=800mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
SPN2308 Applications
- Power Management in Note book