Description
The G1003A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
It is ESD protected.
General Features
● VDS = 100V,ID = 5A
RDS(ON) < 145mΩ @ VGS=10V (Typ:135 mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
G1003A
D
G
S
Schematic diagram
SOT23-3L view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
5
24
3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
41.7 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS VDS=80V, VGS=0V
Min Typ Max Unit
100 105
--
-
800
V
nA
www.goford.cn TEL：075 5-29961262 FAX：075 5 -29961466
Page 1
