Datasheet4U Logo Datasheet4U.com

G1003A - N-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 120mΩ < 130mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>6KV Schematic diagram.

📥 Download Datasheet

Datasheet preview – G1003A

Datasheet Details

Part number G1003A
Manufacturer GFD
File Size 834.74 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G1003A Datasheet
Additional preview pages of the G1003A datasheet.

📁 Similar Datasheet

  • G1003B - N-Channel MOSFET (GOFORD)
  • G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1000QC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
  • G1002 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G1005 - MOSFET (GOFORD)
Other Datasheets by GFD

Full PDF Text Transcription

Click to expand full text
G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.
Published: |