GFD Datasheet | Specifications & PDF Download

3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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GOFORD DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technolog

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OGFD34063D The 34063D is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an

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G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge

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1404TR N-Channel MOSFETS DESCRIPTION The OGFD 1404TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It

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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AGFD EBE11FD8AGFN Specifications • Density: 1GB • Organization  128M wor

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400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has bee

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GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo

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PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications • Density: 512MB • Organization  64M

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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GFD30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N ET TRE F N TO-252 (DPAK) E G ® 0.265

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PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications • Density: 2GB • Organization  256M wor

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