GFD2206 N-Channel Enhancement-Mode MOSFET H C N T.
GFD
3401 - MOSFET
3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..
GFD
2301 - P-Channel Enhancement Mode Power MOSFET
GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
GFD
100N03 - MOSFET
DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet.
GFD
4N60F - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been .
GFD
80N03 - MOSFET
GOFORD DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide.
GFD
5N60F - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technolog.
GFD
2302 - N-Channel Enhancement Mode Power MOSFET
2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and o.
GFD
120N03 - MOSFET
DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet.
GFD
12N60 - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been.
OGFD
20N50 - N-Channel MOSFETS
N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore.
GFD
12N60F - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been.
GFD
630A - N-Channel Enhancement Mode Power MOSFET
GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 200V 0.21Ω 9A • Fast switching • 100% avalanche tested • Improved dv/dt capability Applic.
GFD
740 - 400V N-Channel MOSFET
400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has bee.
GFD
G1003A - N-Channel Enhancement Mode Power MOSFET
G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.
GFD
G40N03A - N-Channel Enhancement Mode Power MOSFET
GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo.
Renesas
R5F523T3AGFD - MCU
Datasheet RX23T Group Renesas MCUs R01DS0248EJ0110 Rev.1.10 Jan 13, 2016 40-MHz 32-bit RX MCUs, built-in FPU, 65.6 DMIPS, 12-bit ADC (equipped with.
GFD
3205TR - N-Channel MOSFETS
N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell dens.
GFD
1404TR - N-Channel MOSFETS
1404TR N-Channel MOSFETS DESCRIPTION The OGFD 1404TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It.
GFD
G1007 - MOSFET
GOFORD General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This.
OGFD
OGFD34063D - monolithic control circuit
OGFD34063D The 34063D is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an .