3401
DESCRIPTION
The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
(196 views)
2301 (GFD)
P-Channel Enhancement Mode Power MOSFET
GOFORD
2301
DESCRIPTION
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l
(64 views)
DESCRIPTION
The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanet
(55 views)
GOFORD
DESCRIPTION
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide
(50 views)
DESCRIPTION
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet
(49 views)
12N60 (GFD)
600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been
(37 views)
20N50 (OGFD)
N-Channel MOSFETS
N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore
(35 views)
4N60F (GFD)
600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been
(35 views)
5N60F (GFD)
600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technolog
(34 views)
G1003A (GFD)
N-Channel Enhancement Mode Power MOSFET
G1003A
N-Channel Enhancement Mode Power MOSFET
Description
The G1003A uses advanced trench technology to provide
excellent RDS(ON) , low gate charge
(23 views)
OGFD34063D (OGFD)
monolithic control circuit
OGFD34063D
The 34063D is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an
(21 views)
740 (GFD)
400V N-Channel MOSFET
400V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has bee
(18 views)
1404TR (GFD)
N-Channel MOSFETS
1404TR
N-Channel MOSFETS
DESCRIPTION
The OGFD 1404TR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It
(16 views)
G40N03A (GFD)
N-Channel Enhancement Mode Power MOSFET
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo
(16 views)
LMT150DNGFDD (TOPWAY)
LCD Module User Manual
LMT150DNGFDD
LCD Module User Manual
Prepared by: Liu Tihou
Date: 2017-06-07
Checked by: Date:
Approved by: Date:
Rev. Descriptions 0.1 Preliminary
(15 views)
7N60F (GFD)
600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been
(15 views)
EBE11FD8AGFD (Elpida Memory)
1GB Fully Buffered DIMM
PRELIMINARY DATA SHEET
www.DataSheet4U.com
1GB Fully Buffered DIMM
EBE11FD8AGFD EBE11FD8AGFN
Specifications
• Density: 1GB • Organization 128M wor
(14 views)
12N60F (GFD)
600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been
(14 views)
LMT150DNGFDD-NNA (TOPWAY)
LCD Module User Manual
LMT150DNGFDD-NNA
LCD Module User Manual
Prepared by: Liu Tihou
Date: 2017-06-07
Checked by: Date:
Approved by: Date:
Rev. 0.1 0.2
0.3
Description
(13 views)
GFD30N03 (General Semiconductor)
N-Channel Enhancement Mode MOSFET
GFD30N03
New Product
Vishay Semiconductor
VDS 30V RDS(ON) 15mΩ ID 43A
N-Channel Enhancement-Mode MOSFET
H C N ET TRE F N TO-252 (DPAK) E G
®
0.265
(12 views)