GFD Datasheet | Specifications & PDF Download

3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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GOFORD DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technolog

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DESCRIPTION The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has bee

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and o

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G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AGFD EBE11FD8AGFN Specifications • Density: 1GB • Organization  128M wor

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N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell dens

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GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 200V 0.21Ω 9A • Fast switching • 100% avalanche tested • Improved dv/dt capability Applic

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PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FD4AGFD EBE21FD4AGFN Specifications • Density: 2GB • Organization  256M wor

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PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications • Density: 512MB • Organization  64M

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