3401 - MOSFET

Datasheet Details

The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

GENERAL

3401.

VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

Part Number	Description	Manufacturer
3401	P-Channel Enhancement Mode Power MOSFET	H&M Semiconductor
3401	P-Channel MOSFET	CXW
3401	P-channel-enhanced MOS field-effect transistor	ChipSourceTek

Part Number	Description