100N03 Datasheet - GFD

100N03 MOSFET

100N03 Features

* VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ )

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stabilty and unifomity with high EAS

* Excellent package for good heat dissipation

* Special process tec

Datasheet Details

100N03

GFD

629.68 KB

Mosfet.

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100N03 MOSFET GFD

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