100N03 Datasheet, mosfet equivalent, GFD

100N03 Features

• Mosfet � VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and

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100N03

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GFD

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📄 Datasheet

Description:

Mosfet. The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide

100N03 Application

• Applications . 100N03 VDS 30V RDS(ON) ID 3.5mΩ 100A GENERAL FEATURES � VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High

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100N03

GFD

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