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100N03 MOSFET

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Description

.
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

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Datasheet Specifications

Part number
100N03
Manufacturer
GFD
File Size
629.68 KB
Datasheet
100N03-GFD.pdf
Description
MOSFET

Features

* VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ )
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process tec

100N03 Distributors

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