100N03 MOSFET

100N03 Description

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The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

100N03 Features

* VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ )
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process tec

📥 Download Datasheet

100N03 Datasheet Preview — Preview of 100N03 PDF

Datasheet Details

Part number: 100N03
Manufacturer: GFD
File Size: 629.68 KB
Datasheet: 100N03-GFD.pdf
Description: MOSFET

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MOSFET GFD

GFD 100N03-like datasheet