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120N03 MOSFET

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Description

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The 120N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

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Datasheet Specifications

Part number
120N03
Manufacturer
GFD
File Size
831.50 KB
Datasheet
120N03-GFD.pdf
Description
MOSFET

Features

* VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ )
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process tec

120N03 Distributors

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