120N03 - MOSFET
120N03 Features
* VDS = 30 V, ID = 120 A RDS(ON) < 4 mΩ @ VGS = 10 V (Typ:2.5mΩ )
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process tec
