120N2VH5 - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.
The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.
1 2 3 4 PowerFLAT™ 5x6 Figure 1.
Internal schematic diagram
120N2VH5 Features
* Order code STL120N2VH5 VDSS 20 V RDS(on) max < 0.003 Ω ID 28 A
* Improved die-to-footprint ratio
* Very low profile package
* Very low thermal resistance
* Conduction losses reduced
* Switching losses reduced
* 2.5 V gate drive
* Very low threshold device Applicatio
