4N60F
GFD
638.46kb
600v n-channel mosfet. This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to mi
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4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by t.
4N60 - Power MOSFET
(Zibo Seno)
Z ibo Seno Electronic Engineering Co., Ltd.
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
4N60 4N65 is a high voltage MOSFET and is desi.
4N60 - N-CHANNEL MOSFET
(KIA)
KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, su.
4N60 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N60
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is designed to hav.
4N60 - N-Channel Power MOSFET
(nELL)
SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal sili.
4N60 - Surface Mount N-Channel Power MOSFET
(WEITRON)
4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better c.
4N60 - N-Channel Mosfet Transistor
(INCHANGE)
isc N-Channel MOSFET Transistor
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minim.
4N60 - N-Channel MOSFET
(HAOHAI)
4A, 600V, N
FQP4N60C FQPF4N60C
H4N60P H4N60F
4N60
H HAOHAI
P: TO-220AB F: TO-220FP
50Pcs
4N60 Series
N-Channel MOSFET
1000Pcs
.
4N60-C - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
4N60-C
Power MOSFET
4A, 600V N-CHANNEL POWER MOSFET
11
DESCRIPTION
The UTC 4N60-C is a high voltage power MOSFET.
4N60-CB - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N60-CB
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60-CB is a high voltage power MOSFET and is designed .