4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET
4N60 Features
* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge(Typical Data:14.5nC)
* Low Reverse Transfer Capacitances(Typical:4pF)
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
* used
