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4N60-R Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

4N60-R Features

* RDS(ON) < 2.5Ω @VGS = 10 V

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

* SYMBOL 1 Power MOSFET TO-220F1

* ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TF1-T 4N60G-TF1-T Pin Assign

4N60-R General Description

The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppli.

4N60-R Datasheet (210.84 KB)

Preview of 4N60-R PDF

Datasheet Details

Part number:

4N60-R

Manufacturer:

Unisonic Technologies

File Size:

210.84 KB

Description:

N-channel power mosfet.

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4N60-R N-CHANNEL POWER MOSFET Unisonic Technologies

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